Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis)
Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.9% (metals basis)
Silicon(II) oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.9% (metals basis)
Silicon(IV) oxide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.995% (metals basis)
Silicon(IV) oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)
Silicon(IV) oxide sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)
Tantalum(V) oxide sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis)
Tantalum(V) oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.9% (metals basis)
Tellurium(IV) ethoxide, tech. 85%, remainder ethanol + View Options AA041105-007 CELL CULTURE PLACE PS 12 WELL Size: 10G Add to quote AA041105-009 CELL CULTURE PLACE PS 12 WELL Size: 2g Add to quote
Titanium nitride sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.5% (metals basis)
Titanium nitride sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.5% (metals basis)
Titanium nitride sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.5% (metals basis)
